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smart meter

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application overview

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smart meter

high power resistance
- series：ur
  power (w)：1/8w~1w
  specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：pls see detail in datasheet
- series：ch
  power (w)：1/10w~2w
  specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：0.05ω~1ω
- series：ch
  power (w)：1/10w~2w
  specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5%
  block：1ω~10mω
anti-surge resistance
- series：rs
  power (w)：1/10w~1w
  specification：0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5% 10% 15% 20%
  block：1ω~1mω
chip thick film resistor
- series：rc
  power (w)：1/10w~1/4w
  specification：0603（1608） 0805（2012） 1206（3216）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5%
  block：47ω~10mω
- series：rl
  power (w)：1/20w~1w
  specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：0.1% 0.5%1% 5%
  block：1ω~1mω
- series：cr
  power (w)：1/8w~1/4w
  specification：0805（2012） 1206（3216）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5%
  block：1ω~10mω
- series：ca
  power (w)：1/16w~1/10w
  specification：ca024a ca034a
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：1ω~1mω
- series：cr
  power (w)：1/16w~1w
  specification：0402~2512
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：0.02ω~1ω
- series：pf
  power (w)：1/20w~1w
  specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：0.1% 0.5%1% 2% 5%
  block：1ω~22mω
- series：cr
  power (w)：1/20w~1w
  specification：01005（0402） 0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：0.1% 0.5% 1% 5%
  block：1ω~100mω
alloy chip resistor
- series：rm
  power (w)：3w
  specification：2512（6432）
  temperature coefficient：±50ppm/℃
  accuracy：1% 2% 5%
  block：1mω~10mω
alloy foil chip resistor
- series：ra
  power (w)：1/3w 1/2w
  specification：0603（1608）
  temperature coefficient：±150ppm/℃ ±75ppm/℃ ±50ppm/℃
  accuracy：1% 2% 5%
  block：2mω 3mω~4mω 5mω~75mω
low resistance low tc high power thick film chip resistor
- series：ur
  power (w)：1w
  specification：2512（6432）
  temperature coefficient：±250ppm/℃ ±100ppm/℃
  accuracy：1% 5%
  block：0.010ω~0.030ω 0.033ω~0.910ω
low resistance high power thick film resistor
- series：ch
  power (w)：1w
  specification：2010（5025）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：0.10ω~1ω(不含)
chip zener diode
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：5.1v~5.6v
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：<100
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：5.1v~5.6v
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：<100
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：5.1v~5.6v
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：<100
switching diode
- maximum reverse voltage (v)：75
  average rectified forward current (a)：0.15
  forward voltage (v)：1 @ if=50ma
  reverse current (ua)：0.025 @ vr=20v 2.5 @ vr=75v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.46 @ if=10ma
  reverse current (ua)：0.3 @ vr=10v
  package：dfn1006-2
schottky diodes
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.37 @ if=10ma
  reverse current (ua)：7 @ vr=10v
  package：dfn0603-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.46 @ if=10ma
  reverse current (ua)：0.3 @ vr=10v
  package：dfn0603-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.29 @ if=10ma 0.30 @ if=20ma 0.40 @ if=100ma
  reverse current (ua)：30 @ vr=30v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.51 @ if=100ma
  reverse current (ua)：1 @ vr=10v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.1
  forward voltage (v)：0.34 @ if=10ma 0.55 @ if=100ma
  reverse current (ua)：10 @ vr=10v 40 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.1
  forward voltage (v)：0.36 @ if=10ma 0.51 @ if=100ma
  reverse current (ua)：1 @ vr=10v 5 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.2
  forward voltage (v)：0.50 @ if=200ma
  reverse current (ua)：10 @ vr=10v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.2
  forward voltage (v)：0.60 @ if=200ma
  reverse current (ua)：1 @ vr=10v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.2
  forward voltage (v)：0.33 @ if=10ma 0.52 @ if=200ma
  reverse current (ua)：10 @ vr=10v 40 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.2
  forward voltage (v)：0.36 @ if=10ma 0.60 @ if=200ma
  reverse current (ua)：1 @ vr=10v 5 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：20
  average rectified forward current (a)：0.5
  forward voltage (v)：0.27 @ if=10ma 0.46 @ if=500ma
  reverse current (ua)：20 @ vr=10v 30 @ vr=20v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.5
  forward voltage (v)：0.27 @ if=10ma 0.46 @ if=500ma
  reverse current (ua)：20 @ vr=10v 40 @ vr=30v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.5
  forward voltage (v)：0.27 @ if=10ma 0.46 @ if=500ma
  reverse current (ua)：20 @ vr=10v 50 @ vr=40v
  package：dfn1006-2
antistatic surge diode
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：5.6
  leakage current (na)：10
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：3.5
  clamping voltage (v) tp = 8/20 μs：3.5
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：10
  package：dfn0603-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±19
  antistatic ability (gap) (kv)：±19
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：12 @ipp=1a 15 @ipp=2a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.6
  package：dfn0603-2
- number of channels：1
  starting voltage (v)：3.3
  breakdown voltage (v)：3.5
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±30
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：15
  clamping voltage (v) tp = 8/20 μs：6.0 @ipp=1a 12 @ipp=15a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：3.3
  breakdown voltage (v)：4
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±12
  antistatic ability (gap) (kv)：±20
  maximum peak pulse current (a) tp = 8/20 μs：5
  clamping voltage (v) tp = 8/20 μs：5.5 @ipp=1a 8.0 @ipp=5a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：10
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±30
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：7.9
  clamping voltage (v) tp = 8/20 μs：9.0 @ipp=1a 17.5 @ipp=7.9a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：20
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：14 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.6
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：100
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：12 @ipp=1a 17 @ipp=2a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：10
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：14 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.3
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：10
  clamping voltage (v) tp = 8/20 μs：13.5 @ipp=10a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：80
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±18
  antistatic ability (gap) (kv)：±20
  maximum peak pulse current (a) tp = 8/20 μs：3.6
  clamping voltage (v) tp = 8/20 μs：12 @ipp=1a 20 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.5
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：12
  breakdown voltage (v)：14.6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±16
  maximum peak pulse current (a) tp = 8/20 μs：6
  clamping voltage (v) tp = 8/20 μs：19 @ipp=1a 25 @ipp=6a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：12
  breakdown voltage (v)：13.3
  leakage current (na)：50
  antistatic ability (contact) (kv)：±30
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：5
  clamping voltage (v) tp = 8/20 μs：19 @ipp=1a 24 @ipp=5a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：60
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：24
  breakdown voltage (v)：26.5
  leakage current (na)：50
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：3
  clamping voltage (v) tp = 8/20 μs：36 @ipp=1a 42 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：24
  breakdown voltage (v)：26.5
  leakage current (na)：50
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：3
  clamping voltage (v) tp = 8/20 μs：36 @ipp=1a 42 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：35
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：36
  breakdown voltage (v)：40
  leakage current (na)：100
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：1.5
  clamping voltage (v) tp = 8/20 μs：58 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：20
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：36
  breakdown voltage (v)：40
  leakage current (na)：100
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：1.5
  clamping voltage (v) tp = 8/20 μs：58 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：4
  starting voltage (v)：3.3
  breakdown voltage (v)：3.4
  leakage current (na)：100
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：4
  clamping voltage (v) tp = 8/20 μs：8 @ipp=1a 10 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.65
  package：dfn2510-10
- number of channels：4
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±12
  antistatic ability (gap) (kv)：±17
  maximum peak pulse current (a) tp = 8/20 μs：5
  clamping voltage (v) tp = 8/20 μs：15 @ipp=1a 25 @ipp=5a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.8
  package：dfn2510-10
- number of channels：4
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±12
  antistatic ability (gap) (kv)：±17
  maximum peak pulse current (a) tp = 8/20 μs：3.4
  clamping voltage (v) tp = 8/20 μs：15 @ipp=1a 25 @ipp=3.4a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.4
  package：dfn2510-10